DEFECT-ASSISTED RELAXATION IN QUANTUM DOTS AT LOW-TEMPERATURE

Authors
SCHROETER DF GRIFFITHS DJ SERCEL PC
Citation
Df. Schroeter et al., DEFECT-ASSISTED RELAXATION IN QUANTUM DOTS AT LOW-TEMPERATURE, Physical review. B, Condensed matter, 54(3), 1996, pp. 1486-1489
Citations number
15
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physical review. B, Condensed matter → ACNP
ISSN journal
01631829
Volume
54
Issue
3
Year of publication
1996
Pages
1486 - 1489
Database
ISI
SICI code
0163-1829(1996)54:3<1486:DRIQDA>2.0.ZU;2-G
Abstract
A model for electron relaxation in a quantum dot, including a nonradia tive pathway through a point defect, is presented, using time-dependen t perturbation theory. The results obtained here extend previous work [Phys. Rev. B 51, 14 532 (1995)] to the experimentally relevant low-te mperature regime. It is found the relaxation through defects may circu mvent the phonon bottleneck predicted for ideal nanometer-scale quantu m dot structures even at low temperatures.