DIRECT OBSERVATION OF ABOVE-BARRIER QUASI-BOUND STATES IN INXGA1-XAS ALAS/GAAS QUANTUM-WELLS/

Authors
LEE CD SON JS LEEM JY NOH SK LEE KS LEE C HWANG IS PARK HY
Citation
Cd. Lee et al., DIRECT OBSERVATION OF ABOVE-BARRIER QUASI-BOUND STATES IN INXGA1-XAS ALAS/GAAS QUANTUM-WELLS/, Physical review. B, Condensed matter, 54(3), 1996, pp. 1541-1544
Citations number
17
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physical review. B, Condensed matter → ACNP
ISSN journal
01631829
Volume
54
Issue
3
Year of publication
1996
Pages
1541 - 1544
Database
ISI
SICI code
0163-1829(1996)54:3<1541:DOOAQS>2.0.ZU;2-G
Abstract
We report the direct observation of numerous above-barrier quasibound states of potential barriers, formed by a thick layer of GaAs sandwich ed between ultrathin AlAs interface layers in InxGa1-xAs/GaAs strained quantum wells. Interband transitions between the conduction and the v alence subband up to n = 26 an clearly observed in the room-temperatur e photoreflectance spectra. Fairly good agreement is obtained between the peak positions and the calculated interband transitions of the qua sibound states found in the GaAs barriers.