780NM OXIDIZED VERTICAL-CAVITY SURFACE-EMITTING LASERS WITH AL0.11GA0.89AS QUANTUM-WELLS

Citation
He. Shin et al., 780NM OXIDIZED VERTICAL-CAVITY SURFACE-EMITTING LASERS WITH AL0.11GA0.89AS QUANTUM-WELLS, Electronics Letters, 32(14), 1996, pp. 1287-1288
Citations number
5
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
ISSN journal
00135194
Volume
32
Issue
14
Year of publication
1996
Pages
1287 - 1288
Database
ISI
SICI code
0013-5194(1996)32:14<1287:7OVSLW>2.0.ZU;2-O
Abstract
Low threshold vertical-cavity surface-emitting lasers with Al0.11Ga0.8 9As four quantum wells for 780nm wavelength emission are fabricated us ing aluminum oxide apertures. The fabrication process requires only si ngle step mask alignment. The 3.4 mu m square laser exhibits a low thr eshold current of 200 mu A, which is more than an order of magnitude s maller than the previous values obtained at 780nm. Singlemode peak out put power is 1.1mW. This 3.4 mu m laser is found to operate in the fun damental transverse mode over the complete operating current range. Th e 7.6 mu m square laser shows peak output power of 2.7mW.