Low threshold vertical-cavity surface-emitting lasers with Al0.11Ga0.8
9As four quantum wells for 780nm wavelength emission are fabricated us
ing aluminum oxide apertures. The fabrication process requires only si
ngle step mask alignment. The 3.4 mu m square laser exhibits a low thr
eshold current of 200 mu A, which is more than an order of magnitude s
maller than the previous values obtained at 780nm. Singlemode peak out
put power is 1.1mW. This 3.4 mu m laser is found to operate in the fun
damental transverse mode over the complete operating current range. Th
e 7.6 mu m square laser shows peak output power of 2.7mW.