HIGH CW POWER (GREATER-THAN-200MW FACET) AT 3.4-MU-M FROM INASSB/INALASSB STRAINED-QUANTUM-WELL DIODE-LASERS/

Authors
CHOI HK TURNER GW MANFRA MJ
Citation
Hk. Choi et al., HIGH CW POWER (GREATER-THAN-200MW FACET) AT 3.4-MU-M FROM INASSB/INALASSB STRAINED-QUANTUM-WELL DIODE-LASERS/, Electronics Letters, 32(14), 1996, pp. 1296-1297
Citations number
9
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
32
Issue
14
Year of publication
1996
Pages
1296 - 1297
Database
ISI
SICI code
0013-5194(1996)32:14<1296:HCP(FA>2.0.ZU;2-S
Abstract
Strained quantum well diode lasers consisting of compressively straine d InAsSb active layers and tensile strained InAlAsSb barrier layers ha ve exhibited CW power of 215mW/facet at 80 K. The internal quantum eff iciency and internal loss coefficient at 80 K are estimated to be 63% and 9cm(-1), respectively.