STRUCTURAL DEPENDENCE OF 1.3-MU-M NARROW BEAM LASERS FABRICATED BY SELECTIVE MOCVD

Authors
KASUKAWA A YAMANAKA N IWAI N NAKAHIRA Y YOKOUCHI N
Citation
A. Kasukawa et al., STRUCTURAL DEPENDENCE OF 1.3-MU-M NARROW BEAM LASERS FABRICATED BY SELECTIVE MOCVD, Electronics Letters, 32(14), 1996, pp. 1304-1305
Citations number
5
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
32
Issue
14
Year of publication
1996
Pages
1304 - 1305
Database
ISI
SICI code
0013-5194(1996)32:14<1304:SDO1NB>2.0.ZU;2-Q
Abstract
Lasing characteristics of 1.3 mu m narrow beam lasers have been invest igated in terms of the energy separation between gain and waveguide re gions simultaneously formed by selective MOCVD. The HR-coated lasers w ith a large energy separation of 110meV exhibit a low threshold curren t of 12mA, a high power of >50mW, and a high temperature of 120 degree s C with narrow beam divergence of 11 degrees (horizontal) and 11 degr ees(vertical).