SYNTHESIS AND THERMOELECTRIC PROPERTIES OF THE NEW TERNARY BISMUTH SULFIDES KBI6.33S10 AND K2BI8S13

Citation
Mg. Kanatzidis et al., SYNTHESIS AND THERMOELECTRIC PROPERTIES OF THE NEW TERNARY BISMUTH SULFIDES KBI6.33S10 AND K2BI8S13, Chemistry of materials, 8(7), 1996, pp. 1465-1474
Citations number
51
Categorie Soggetti
Chemistry Physical","Material Science
Journal title
ISSN journal
08974756
Volume
8
Issue
7
Year of publication
1996
Pages
1465 - 1474
Database
ISI
SICI code
0897-4756(1996)8:7<1465:SATPOT>2.0.ZU;2-8
Abstract
KBi6.33S10 and K2Bi8S13 were synthesized by the direct combination of K2S/Bi2S3 at high temperature (> 700 degrees C). The reaction of K2S/3 .3Bi(2)S(3) at 800 degrees C revealed the presence of a new ternary su lfide KBi6.33S10 (I, 92% yield). The shiny, silver polycrystalline mat erial crystallizes in the orthorhombic space group Pnma (No. 62) with a = 24.05(1) Angstrom, b = 4.100(2) Angstrom, c = 19.44(1) Angstrom, V = 1917(3) Angstrom(3), Z = 4, and d(c) = 5.828 g/cm(3). Data with F-o (2) > 3 sigma(F-o(2)), 862; no. of variables 108, 2 theta(max)50 degre es. The final R/R(w) = 4.3/4.7%. The structure consists of blocks of B i2Te3- and CdI2-type units that are connected to form a three-dimensio nal network with Kf ions located in the channels that run along the b axis. The same reaction but with a different reactant ratio at 750 deg rees C gave the new ternary sulfide K2Bi8S13 (II, 94% yield). This com pound crystallizes in the monoclinic space group P2(1)/m (No. 11) with a = 16.818(2) Angstrom, b = 4.074(5) degrees, c = 17.801(3) Angstrom, beta = 90.48(1)degrees V = 1220(2) Angstrom(3), Z = 2, and d(c) = 5.9 00 g/cm(3). Data with F-0(2) > 3 sigma(F-0(2)), 1924; no. of variables 131, 2 theta(max) 50 degrees. The final R/R(w) = 7.3/8.2%. The struct ure of the shiny rodlike crystals is closely related to that of I. As in I, it also consists of Bi2Te3- and CdI2-type fragments that connect to form Kt-filled channels. The two potassium atoms and one bismuth a tom are disordered over three sites. Electrical conductivity on I show semiconducting behavior with 10(2) S/cm at 300 K. Compound II possess es an electrical conductivity of 10(2) S/cm at 300 K. The optical band gaps of I and II (0.06-0.24 eV) were estimated by infrared diffuse ref lectance measurements. Thermal analysis and thermal conductivity data for I and II are reported. The thermal conductivity of KBi6.33S10 is f ound to be substantially lower than that of Bi2Te3.