NO SENSING CHARACTERISTICS OF ZNO-NIO JUNCTION STRUCTURE WITH INTERVENING SIO2 LAYER

The NO sensing characteristics of junction structure composed of n-typ e Al2O3-doped ZnO, p-type NiO and intervening SiO2 layer at the juncti on interface are investigated. We studied the effects of junction stru cture configuration and the thicknesses of the intervening and compone nt layers on the gas sensing characteristics. The ultrathin intervenin g SiO2 layer at the junction interface has positive effects on NO sens ing characteristics. The detection mechanism is considered to result f rom the combination of the usual semiconductive process and the hetero junction detection process.