O. Schafer et al., POLY(P-PHENYLENEVINYLENE) BY CHEMICAL-VAPOR-DEPOSITION - SYNTHESIS, STRUCTURAL EVALUATION, GLASS-TRANSITION, ELECTROLUMINESCENCE, AND PHOTOLUMINESCENCE, Synthetic metals, 82(1), 1996, pp. 1-9
Poly (p-phenylenevinylene) (PPV) was prepared via chemical vapor depos
ition (CVD) by vapor phase pyrolysis of alpha,alpha'-dihalogenated p-x
ylenes or alpha,alpha-dihalogenated p-xylenes. Differences in the prod
uct composition obtained are discussed. The advantages for the film fo
rmation as well as the limitations are reported with respect to the fa
brication of light-emitting diode (LED) cells. PPV films were characte
rized by various techniques. They show a glass transition temperature
at 220 degrees C, a hypsochromic shift of the S-1 --> S-0 transition a
nd higher degree of disorder as compared to ordinary PPV. The current-
voltage characteristics of LED cells with PPV prepared via CVD show an
unusually high rectification ratio. In contrast to PPV annealed at lo
wer temperatures the formation of an unidentified defect structure was
detected by C-13 CP-MAS/TOSS spectroscopy with PPV films annealed at
higher temperatures.