LOW-ENERGY RESPONSE OF SILICON PN-JUNCTION DETECTOR

The response function of implanted silicon detectors in the soft X-ray region (150 eV-6 keV) has been measured. To reduce signal charge loss in the highly doped p(+)-region just beneath the detector surface, di fferent techniques of producing shallow doping profiles and enhancing the electric field at the pn-junction are presented. The spectroscopic resolution could be improved significantly. On (100) detector materia l, a peak to valley ratio of 5700:1 for the mangan K-alpha line was ac hieved. The measured pulse-height distributions were fitted by a detec tor model, taking the doping profile of the entrance window into accou nt. The results of the fit were in excellent agreement with the measur ement data over the entire energy range.