THE EFFECT OF RADIATION-INDUCED DEFECTS ON THE PERFORMANCE OF HIGH-RESISTIVITY SILICON DIODES

Authors
MATHESON J ROBBINS M WATTS S
Citation
J. Matheson et al., THE EFFECT OF RADIATION-INDUCED DEFECTS ON THE PERFORMANCE OF HIGH-RESISTIVITY SILICON DIODES, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 377(2-3), 1996, pp. 224-227
Citations number
8
Categorie Soggetti
Nuclear Sciences & Tecnology","Physics, Particles & Fields","Instument & Instrumentation",Spectroscopy
Journal title
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment → ACNP
ISSN journal
01689002
Volume
377
Issue
2-3
Year of publication
1996
Pages
224 - 227
Database
ISI
SICI code
0168-9002(1996)377:2-3<224:TEORDO>2.0.ZU;2-7
Abstract
An overview of defect kinetics in high resistivity silicon is presente d. A device model which gives type inversion due to the presence of de ep accepters is described.