INVESTIGATION ON THE N-EFF REVERSE ANNEALING EFFECT USING TSC I-DLTS - RELATIONSHIP BETWEEN NEUTRON-INDUCED MICROSCOPIC DEFECTS AND SILICONDETECTOR ELECTRICAL DEGRADATIONS/

Neutron induced defect levels in high resistivity silicon detectors ha ve been studied using a current-based macroscopic defect analysis syst em: thermally stimulated current (TSC) and current deep level transien t spectroscopy (I-DLTS). These studies have been correlated to the tra ditional C-V, I-V, and transient current and charge techniques (TCT/TC hT) after neutron radiation and subsequent thermal anneals. It has bee n found that the increases of the space charge density, N-eff, in irra diated detectors after thermal anneals (N-eff reverse anneal) correspo nd to the increases of deep levels in the silicon bandgap. In particul ar, increases of the double vacancy center (V-V and V-V-- -) and/or C- i-O-i level have good correlations with the N-eff reverse anneal. It h as also been observed that the leakage current of highly irradiated (P hi(n) > 10(13) n/cm(2)) detectors increases after thermal anneals, whi ch is different from the leakage current annealing behavior of slightl y irradiated (Phi(n) < 10(13) n/cm(2)) detectors. It is apparent that V-V center and/or C-i-O-i level play important roles in both N-eff and leakage current degradations for highly irradiated high resistivity s ilicon detectors.