MODELING AND CHARACTERIZATION OF A RADIATION-SENSITIVE P-CHANNEL TRANSISTOR IN A FLOATING N-WELL

Characterization is made of a novel radiation sensor which is sensitiv e to alpha particles and protons, using computer codes and analytical models. The sensor cell consists of a p-channel transistor in a floati ng n-well, Cylindrically symmetric three-dimensional calculations base d on the whole set of semiconductor equations are carried out in order to understand the dynamic behaviour of the sensor cell. On the other hand, a new analytical model arising from the solution of the charge c ontinuity equation of the n-well area and a transistor model describe the main principles of the sensor and allow to determine the sensitivi ty and the essential sensor parameters. Furthermore, the influence of particle properties, manufacturing processes, and design parameters ar e studied. The results obtained by simulation are compared with measur ements and are used for an improvement of sensor design and technology .