NEW PIXEL DETECTOR CONCEPTS BASED ON JUNCTION FIELD-EFFECT TRANSISTORS ON HIGH-RESISTIVITY SILICON

A p-channel Junction Field Effect Transistor on a fully depleted high ohmic silicon substrate (DEPJFET) has been used as unit cell for pixel detectors. The most important features of this structure are the inte rnal charge amplification, the low power consumption and the low detec tor capacitance leading to a high signal to noise ratio. Two different prototype designs, featuring pulsed or continuous reset, have been fa bricated and tested. Both have been characterized with respect to thei r signal performance and noise behavior.