EVIDENCE OF SPONTANEOUS FORMATION OF STEPS ON SILICON(100)

Authors
ZHONG L HOJO A MATSUSHITA Y AIBA Y HAYASHI K TAKEDA R SHIRAI H SAITO H MATSUSHITA J YOSHIKAWA J
Citation
L. Zhong et al., EVIDENCE OF SPONTANEOUS FORMATION OF STEPS ON SILICON(100), Physical review. B, Condensed matter, 54(4), 1996, pp. 2304-2307
Citations number
26
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physical review. B, Condensed matter → ACNP
ISSN journal
01631829
Volume
54
Issue
4
Year of publication
1996
Pages
2304 - 2307
Database
ISI
SICI code
0163-1829(1996)54:4<2304:EOSFOS>2.0.ZU;2-3
Abstract
Extra steps have been found with atomic-force microscopy generated on rather flat silicon (100) surfaces annealed at 1200 degrees C in hydro gen, through a comparison with the surface annealed in argon, which ex hibits a typical (S-a+S-b) step structure. It is suggested that the ex tra steps are spontaneously generated due to the relaxation of the str ain energy associated with the atomic dimers on the reconstructed surf ace.