MAGNETIC-FIELD-INDUCED RESONANT-TUNNELING IN PARALLEL 2-DIMENSIONAL SYSTEMS

Citation
T. Ihn et al., MAGNETIC-FIELD-INDUCED RESONANT-TUNNELING IN PARALLEL 2-DIMENSIONAL SYSTEMS, Physical review. B, Condensed matter, 54(4), 1996, pp. 2315-2318
Citations number
17
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
01631829
Volume
54
Issue
4
Year of publication
1996
Pages
2315 - 2318
Database
ISI
SICI code
0163-1829(1996)54:4<2315:MRIP2S>2.0.ZU;2-L
Abstract
The magnetoresistance at 4.2 K of two spatially remote two-dimensional electron gases is investigated. The magnetic field B is applied paral lel to the planes of the two-dimensional electron gases (2DEG's). Tunn eling between them occurs above a critical held B,. In a configuration where the current I is perpendicular to B, a resistance resonance is observed at B-c, which is absent when I is parallel to B. This resista nce resonance is due to a large difference in the mobilities of the tw o 2DEG's. A model calculation based on the Boltzmann equation and the symmetry properties of the electron subband dispersion curves reproduc es the observed phenomena.