DIELECTRIC ENHANCEMENT OF EXCITONS IN NEAR-SURFACE QUANTUM-WELLS

Authors
KULIK LV KULAKOVSKII VD BAYER M FORCHEL A GIPPIUS NA TIKHODEEV SG
Citation
Lv. Kulik et al., DIELECTRIC ENHANCEMENT OF EXCITONS IN NEAR-SURFACE QUANTUM-WELLS, Physical review. B, Condensed matter, 54(4), 1996, pp. 2335-2338
Citations number
10
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physical review. B, Condensed matter → ACNP
ISSN journal
01631829
Volume
54
Issue
4
Year of publication
1996
Pages
2335 - 2338
Database
ISI
SICI code
0163-1829(1996)54:4<2335:DEOEIN>2.0.ZU;2-F
Abstract
The excitons in near-surface InxGa1-xAs/GaAs QW's have been investigat ed by photoluminescence excitation and magnetophotoluminescence spectr oscopy. The dielectric enhancement of excitons is demonstrated by meas uring the splitting of the 2s and Is excitons and the diamagnetic shif t of the Is exciton state. In agreement with theoretical calculations the exciton binding energy is found to be enhanced 1.5 times by the di electric confinement for 5-nm-wide quantum wells with cap layer thickn esses below 3 nm.