COMPLETE THEORETICAL-ANALYSIS OF THE KAPLAN-SOLOMON-MOTT MECHANISM OFSPIN-DEPENDENT RECOMBINATION IN SEMICONDUCTORS

The Kaplan-Solomon-Mott mechanism of spin-dependent recombination is c onsidered theoretically. Quantum kinetic equations describing the reco mbination of charge carriers in the presence of both static and high-f requency magnetic fields are solved in an analytical and computational manner. No restrictions are imposed on the fields, recombination and dissociation rates, and spin relaxation time. Assuming that the transv ersal relaxation time is equal to the longitudinal relaxation time, a spin-dependent part of the recombination rate showing itself in the mo ment of spin resonance onset is calculated. A nonmonotonic field depen dence of the spin-dependent part of the recombination rate is found. V arious types of resonance peaks are shown to be possible. Physical fac tors affecting the shape of the resonance peak are found. Spin-depende nt effects taking place within the range of low magnetic fields are ex amined in detail.