C-AXIS ORIENTATION OF AIN FILMS PREPARED BY ECR PECVD

AIN films were deposited on silicon substrates at low temperatures (30 0-500 degrees C) by electron cyclotron resonance plasma-enhanced chemi cal vapor deposition (ECR PECVD) using trimethylaluminum, N-2 and H-2 gases. The degree of c-axis orientation, crystallinity, functional gro ups and chemical composition of the films were investigated for variou s deposition conditions. The degree of c-axis orientation depends on t he substrate surface condition and it improves with increasing substra te temperature as well as with increasing microwave power. A c-axis or iented (sigma = 4.3 degrees) AlN film was prepared at 500 degrees C. T he importance of the system design which allows the precursor to be di ssociated efficiently by the ECR plasma is discussed.