SUPERCRITICAL-FLUID CHEMICAL-DEPOSITION OF THIN INP FILMS - A NEW APPROACH AND PRECURSORS

Citation
Vk. Popov et al., SUPERCRITICAL-FLUID CHEMICAL-DEPOSITION OF THIN INP FILMS - A NEW APPROACH AND PRECURSORS, Thin solid films, 279(1-2), 1996, pp. 66-69
Citations number
13
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
ISSN journal
00406090
Volume
279
Issue
1-2
Year of publication
1996
Pages
66 - 69
Database
ISI
SICI code
0040-6090(1996)279:1-2<66:SCOTIF>2.0.ZU;2-H
Abstract
The results of experimental study of InP thin film fabrication by the supercritical fluid chemical deposition (SFCD) process are presented. New solid, low toxic, atmosphere-stable phosphorous and indium precurs ors have been found and synthesized, analysed and applied to InP SFCD growth. High-quality InP layers were obtained by rapid expansion of a triphenylphosphine and tris(o-dimethylaminomethylphenyl)indium(III) mi xture in supercritical CO2, C2F6 and Xe to the heated InP substrate in vacuum.