METASTABLE TISI-CHI-N-GAMMA-OZ FILMS OF B1-TYPE STRUCTURE PREPARED BYTHE ARC PROCESS

Metastable TiSixNyOz films with the cubic B1-type structure were synth esized by are deposition. X-ray photoelectron spectroscopy (XPS), tran smission electron microscopy (TEM) and electron microprobe analysis (E MA) methods were employed to study the composition and structure of th e films as a function of the are process parameters: working gas press ure, substrate temperature and potential. It was established that sili con atoms are introduced into the B1-type structure of TiNyOz films an d are located in the non-metallic sublattice. The influence of the non -metallic sublattice non-stoichiometry and oxygen impurity content on the silicon concentration in the films was discussed on the basis of t he experimental data obtained and the quantum chemical calculations pe rformed.