SURFACE CHARACTERIZATION OF DIAMOND FILMS POLISHED BY THERMOMECHANICAL POLISHING METHOD

Citation
Sk. Choi et al., SURFACE CHARACTERIZATION OF DIAMOND FILMS POLISHED BY THERMOMECHANICAL POLISHING METHOD, Thin solid films, 279(1-2), 1996, pp. 110-114
Citations number
24
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
ISSN journal
00406090
Volume
279
Issue
1-2
Year of publication
1996
Pages
110 - 114
Database
ISI
SICI code
0040-6090(1996)279:1-2<110:SCODFP>2.0.ZU;2-1
Abstract
The rough grown surface of a diamond film deposited by the hot filamen t chemical vapour deposition (CVD) method was polished by thermomechan ical polishing on a hot iron plate at 1173 K. The surface composition and structure of the polished diamond film were analysed by Raman spec troscopy, Auger electron spectroscopy (AES), thin film X-ray diffracti on (XRD) and secondary ion mass spectrometry (SIMS). The graphitizatio n of the near-surface region of the diamond film by the hot iron plate was observed during thermomechanical polishing. At the diamond film/S i interface, beta-SiC was observed during the early stages of polishin g, but after prolonged treatment the graphitization of the diamond fil m occurred rapidly.