ELECTROLUMINESCENT ZNS-MN FILMS PREPARED AT 220-450 DEGREES-C USING COMPLEX-COMPOUNDS WITH SULFUR-CONTAINING LIGANDS

Citation
Vg. Bessergenev et al., ELECTROLUMINESCENT ZNS-MN FILMS PREPARED AT 220-450 DEGREES-C USING COMPLEX-COMPOUNDS WITH SULFUR-CONTAINING LIGANDS, Thin solid films, 279(1-2), 1996, pp. 135-139
Citations number
15
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
ISSN journal
00406090
Volume
279
Issue
1-2
Year of publication
1996
Pages
135 - 139
Database
ISI
SICI code
0040-6090(1996)279:1-2<135:EZFPA2>2.0.ZU;2-J
Abstract
A method of preparation of manganese-doped ZnS electroluminescent film s is proposed using the decomposition in vacuum of volatile complex di thiocarbamate and xanthate compounds. The composition and structure of the films were studied by chemical, electron paramagnetic resonance ( EPR) and X-ray phase analyses. It was shown that the crystal structure of the films depends on the class of precursor and the presence of do pant. Using the EPR method, it was found that, at manganese concentrat ions of about 1% or less, the dopant is incorporated into the ZnS latt ice as single non-interacting ions. The electroluminescence maximum wa s observed at lambda = 580 nm; the luminance was about 1500 cd m(-2) a t a voltage of about 190 V and a frequency of 5 kHz.