Vg. Bessergenev et al., ELECTROLUMINESCENT ZNS-MN FILMS PREPARED AT 220-450 DEGREES-C USING COMPLEX-COMPOUNDS WITH SULFUR-CONTAINING LIGANDS, Thin solid films, 279(1-2), 1996, pp. 135-139
A method of preparation of manganese-doped ZnS electroluminescent film
s is proposed using the decomposition in vacuum of volatile complex di
thiocarbamate and xanthate compounds. The composition and structure of
the films were studied by chemical, electron paramagnetic resonance (
EPR) and X-ray phase analyses. It was shown that the crystal structure
of the films depends on the class of precursor and the presence of do
pant. Using the EPR method, it was found that, at manganese concentrat
ions of about 1% or less, the dopant is incorporated into the ZnS latt
ice as single non-interacting ions. The electroluminescence maximum wa
s observed at lambda = 580 nm; the luminance was about 1500 cd m(-2) a
t a voltage of about 190 V and a frequency of 5 kHz.