M. Boukezzata et al., CHARACTERISTICS OF THE THERMAL-OXIDATION OF HEAVILY BORON-DOPED POLYCRYSTALLINE SILICON THIN-FILMS, Thin solid films, 279(1-2), 1996, pp. 145-154
Dry oxidation kinetics were compared for 2 x 10(20) cm(-3) boron-impla
nted and in-situ doped films deposited at temperatures ranging between
520 and 620 degrees C. The characteristics of the thermal oxidation o
f these films have been studied over the oxidation temperature range o
f 750 to 1050 degrees C and for durations of 10 min to 26 h. High valu
es of both the surface oxidation rate k(s) and the oxide diffusion coe
fficient D are evidenced as typical of the in-situ doped films. In add
ition to the well-known effect that heavy doping increases the rate of
oxidation similar to what is observed in single-crystal silicon, it i
s also shown specially, for the in-situ boron-doped films compared wit
h 2 x 10(20) cm(-3) in-situ phosphorus-doped ones, that the greatest o
xidation rate is observed at high oxidation temperatures (T-ox > 1000
degrees C). This enhancement is related to some specific factors of th
ese materials, such as grain boundary structures, defects, texture and
electrical properties related to the segregation and supersaturation
phenomenon which occur at these levels of doping.