CHARGE-TRANSFER AND ELECTRONIC SUBBAND STUDIES IN A STRAINED IN0.15GA0.85AS AL0.22GA0.78AS SINGLE-QUANTUM-WELL/

Shubnikov-de Haas (S-dH) and Van der Pauw Hall effect measurements on a strained In0.15Ga0.85As/Al0.22Ga0.78As single quantum well grown by molecular beam epitaxy have been performed to demonstrate the existenc e of the two-dimensional electron gas in the In0.15Ga0.85As single qua ntum well. The results of the fast Fourier transform results for the S -dH data clearly indicate electron occupation of two subbands in the I n0.15Ga0.85As single quantum well. Electronic subband energies and wav efunctions in the In0.15Ga0.85As quantum well were calculated by a sel f-consistent method taking into account exchange-correlation effects t ogether without and with strain effects. The calculated total carrier density including the strain effect was in better agreements with that determined from the S-dH and Hall effect measurements.