INTERBAND IMPACT IONIZATION BY TERAHERTZ ILLUMINATION OF INAS HETEROSTRUCTURES

Citation
Ag. Markelz et al., INTERBAND IMPACT IONIZATION BY TERAHERTZ ILLUMINATION OF INAS HETEROSTRUCTURES, Applied physics letters, 69(26), 1996, pp. 3975-3977
Citations number
17
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
69
Issue
26
Year of publication
1996
Pages
3975 - 3977
Database
ISI
SICI code
0003-6951(1996)69:26<3975:IIIBTI>2.0.ZU;2-T
Abstract
Experimental studies of InAs heterostructures illuminated by far-infra red (FIR) radiation reveal an abrupt increase in the charge density fo r FIR intensities above a threshold value that rises with increasing f requency. We attribute this charge density rise to interband impact io nization in a regime in which omega tau(m) similar to 1, where tau(m) is the momentum relaxation time, and f=omega/2 pi is the FIR frequency . The dependence of the density rise on the FIR field strength support s this interpretation, and gives threshold fields of 3.7-8.9 kV/cm for the frequency range 0.3-0.66 THz. (C) 1996 American Institute of Phys ics.