OPTICAL NEAR-FIELD PHOTOCURRENT SPECTROSCOPY - A NEW TECHNIQUE FOR ANALYZING MICROSCOPIC AGING PROCESSES IN OPTOELECTRONIC DEVICES

Citation
A. Richter et al., OPTICAL NEAR-FIELD PHOTOCURRENT SPECTROSCOPY - A NEW TECHNIQUE FOR ANALYZING MICROSCOPIC AGING PROCESSES IN OPTOELECTRONIC DEVICES, Applied physics letters, 69(26), 1996, pp. 3981-3983
Citations number
11
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
69
Issue
26
Year of publication
1996
Pages
3981 - 3983
Database
ISI
SICI code
0003-6951(1996)69:26<3981:ONPS-A>2.0.ZU;2-5
Abstract
The potential of optical near-field photocurrent spectroscopy for anal yzing microscopic aging processes in optoelectronic devices is demonst rated, The technique combines the subwavelength spatial resolution of near-field optics with tunable laser excitation, allowing for selectiv e investigation of specific parts of the device structure, Experiments on GaAs/(AlGa)As high power laser diodes before and after accelerated aging provide direct visualization of defect growth within the p-i-n junction and information on aging-enhanced recombination processes clo se to the laser facet. The effect of wave guiding of the exciting ligh t on the image formation is discussed. The nondestructiveness makes th is technique a particularly attractive method for in situ analysis in high power laser diodes. (C) 1996 American Institute of Physics.