PULSED-LASER DEPOSITION OF ZNTE THIN-FILMS

Authors
BHUMIA S BHATTACHARYA P BOSE DN
Citation
S. Bhumia et al., PULSED-LASER DEPOSITION OF ZNTE THIN-FILMS, Materials letters, 27(6), 1996, pp. 307-311
Citations number
16
Categorie Soggetti
Material Science","Physics, Applied
Journal title
Materials letters → ACNP
ISSN journal
0167577X
Volume
27
Issue
6
Year of publication
1996
Pages
307 - 311
Database
ISI
SICI code
0167-577X(1996)27:6<307:PDOZT>2.0.ZU;2-N
Abstract
Thin films of ZnTe were deposited on glass and Si by pulsed laser abla tion at substrate temperatures of 26 degrees C and 286 degrees C. X-ra y diffraction studies showed that films deposited at 26 degrees C were amorphous and those deposited at 286 degrees C were polycrystalline. X-ray photoelectron spectroscopy (XPS) showed the Zn:Te ratio to be 49 .1:50.9 for both types of films. The band gap of the films deposited a t 286 degrees C was 2.2 eV. The conductivity of the films was 1.09 x 1 0(-3) Omega(-1) cm(-1) and 2.59 x 10(-6) Omega(-1) cm(-1) respectively at 300 K. The variation of conductivity with temperature and the prop erties of ZnTe/Si heterojunctions were also studied.