ELECTRON-SPECTROSCOPY STUDY OF THE SILVER-DIAMOND(100)-H INTERFACE

The interaction between silver and a boron doped diamond single crysta l has been characterized by Auger electron spectroscopy, ionization lo ss spectroscopy, and low energy electron diffraction. Silver depositio n (equivalent film thickness 3-15 Angstrom) at room temperature result s in the formation of silver islands. During subsequent thermal anneal ing, silver islands cluster and finally desorb. In contrast to other m etals, neither intermixing nor graphitization or carbide formation at the silver-diamond interface are observed. (C) 1996 American Institute of Physics.