INFLUENCE OF THE LIGHT-INDUCED DEGRADATION ON THE EXTENDED STATE MOBILITY IN HYDROGENATED AMORPHOUS-SILICON

We measured the effects of light soaking on the extended state electro n mobility in intrinsic and n-type doped hydrogenated amorphous silico n samples. We obtained the temperature dependence of the mobility in t he range 0-80 degrees C, using a recently proposed method [Dawson et a l., Appl. Phys. Lett. 63, 955 (1993)]. We found a decrease of the mobi lity as the degree of light-induced degradation increased, We suggest that these changes in the extended state transport are caused by an en hancement in the magnitude of the potential fluctuations introduced by the extra created charged defects. (C) 1996 American Institute of Phy sics.