CROSS-SECTIONAL HIGH-RESOLUTION ELECTRON-MICROSCOPY OF ZN-POWER PULSED-LASER ANNEALED GAAS( IMPLANTED AND LOW)

High resolution transmission electron microscopy has been used to inve stigate the lattice damage distribution in Zn+ implanted and implanted plus low-power pulsed-laser annealed (LPPLA) GaAs, The damage distrib ution of implanted samples has been examined in detail showing the pre sence of a continuous amorphous layer under the surface and stacking f ault tetrahedra nuclei at the inner a-c interface. A solid phase epita xial regrowth of ion implanted GaAs has been induced by LPPLA techniqu e. In the annealed samples, the crystalline recovering is characterize d by a low density of residual extended defects lying in the fully rec rystallized amorphous layer. (C) 1996 American Institute of Physics.