THE SPECTRO-PHOTOVOLTAIC CHARACTERISTICS OF A CARBONACEOUS FILM N-TYPE SILICON (C/N-SI) PHOTOVOLTAIC CELL/

A photovoltaic cell with carbonaceous thin film/n-type silicon (C/n-Si ) was fabricated utilizing a process in which a carbonaceous thin film was deposited on an n-type silicon substrate by chemical-vapor deposi tion of 2,5-dimethyl-p-benzoquinone at 500 degrees C. Under illuminati on of 15 mW cm(-2) light with wavelengths between 400 and 800 nm (xeno n arc lamp), a power conversion efficiency (eta) of 6.45% was achieved from this photovoltaic cell. This C/n-Si cell has shown a normalized short-circuit-current efficiency of more than 0.85 under illumination of 30 mu W cm(-2) monochromatic light from 500 to 950 nm. (C) 1996 Ame rican Institute of Physics.