EVIDENCE FOR INTERNAL ELECTRIC-FIELDS IN 2 VARIANT ORDERED GAINP OBTAINED BY SCANNING CAPACITANCE MICROSCOPY

Single and two variant ordered GaInP samples are studied in cross sect ion with the scanning capacitance microscope. Our study shows signific ant differences in the electronic properties of single and two variant GaInP. In unintentionally doped, ordered two variant samples, both n and p-type like domains are observed with the scanning capacitance mic roscope. In contrast, a spatially uniform capacitance signal is observ ed in unintentionally doped single variant ordered GaInP. These micros copic capacitance observations can be qualitatively explained by bend bending or internal electric fields. (C) 1996 American Institute of Ph ysics.