INCLUDING GETTER EFFECT IN A NUMERICAL CONTRAST CALCULATION FOR MICROGRAPHS - A NUMERICAL CONTRAST CALCULATION FOR ELECTRON-BEAM-INDUCED CURRENT AT GETTERED DISLOCATIONS

Electron beam induced current (EBIC) microscopy is a very powerful tec hnique for revealing the electrical activity of defects in semiconduct ors. Gettering of impurities at defects has been observed previously a fter certain sample heat treatments, which resulted in altered contras t patterns and line scan profiles. Getter effects have been included i n a numerical or analytical contrast simulation which employ the Monte Carlo method for generating the carrier distribution. We compare the findings with an observed white contrast at misfit dislocations in EBI C micrographs. (C) 1996 American Institute of Physics.