SOLUBLE AND PROCESSABLE REGIOREGULAR POLY(3-HEXYLTHIOPHENE) FOR THIN-FILM FIELD-EFFECT TRANSISTOR APPLICATIONS WITH HIGH-MOBILITY

The electrical characteristics of held-effect transistors using soluti on cast regioregular poly(3-hexylthiophene) are discussed. We demonstr ate that both high field-effect mobilities (ca. 0.045 cm(2)/V s in the accumulation mode and 0.01 cm(2)/V s in the depletion mode), and rela tively high on/off current ratios (greater than 10(3)) can be achieved . We find that the him quality and field-effect mobility are strongly dependent on the choice of solvents. In addition, treating a film with ammonia or heating to 100 degrees C under N-2 can increase the on/off ratio without decreasing the mobility. (C) 1996 American Institute of Physics.