Phase-matched second-harmonic generation in the highly chi((2))-active
layered semiconductor GaSe is demonstrated in the near-infrared frequ
ency region. Due to the high indices of refraction, the internal phase
-matching angle of about 30 degrees is beyond the critical angle of to
tal reflection for a z-cut crystal. This problem is overcome by sandwi
ching the crystal between two half-cylindrical glass rods, which leads
to a shift of the critical angle to larger values. (C) 1996 American
Institute of Physics.