A. Fernandez et al., CHARACTERIZATION OF CARBON NITRIDE THIN-FILMS PREPARED BY DUAL-ION BEAM SPUTTERING, Applied physics letters, 69(6), 1996, pp. 764-766
Carbon nitride thin films obtained by dual ion beam sputtering have be
en investigated by electron energy-loss spectroscopy (EELS), transmiss
ion electron microscopy, and Fourier transform infrared spectroscopy,
The nitrogen content in the films depends on deposition conditions. A
maximum value of N/C=0.8 has been achieved. A new peak at 286.7 eV ene
rgy loss in the C K-edge EELS spectra has been assigned to C=N bonds w
ith C in the sp(2) hybridization state. In addition, experimental evid
ences are presented of the formation of beta-C3N4 crystallites embedde
d in a layer of a polymer like CNx amorphous phase. An evaluation of t
he experimental parameters that lead to the highest N content in the f
ilms is also included. (C) 1996 American Institute of Physics.