CHARACTERIZATION OF CARBON NITRIDE THIN-FILMS PREPARED BY DUAL-ION BEAM SPUTTERING

Citation
A. Fernandez et al., CHARACTERIZATION OF CARBON NITRIDE THIN-FILMS PREPARED BY DUAL-ION BEAM SPUTTERING, Applied physics letters, 69(6), 1996, pp. 764-766
Citations number
12
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
69
Issue
6
Year of publication
1996
Pages
764 - 766
Database
ISI
SICI code
0003-6951(1996)69:6<764:COCNTP>2.0.ZU;2-Y
Abstract
Carbon nitride thin films obtained by dual ion beam sputtering have be en investigated by electron energy-loss spectroscopy (EELS), transmiss ion electron microscopy, and Fourier transform infrared spectroscopy, The nitrogen content in the films depends on deposition conditions. A maximum value of N/C=0.8 has been achieved. A new peak at 286.7 eV ene rgy loss in the C K-edge EELS spectra has been assigned to C=N bonds w ith C in the sp(2) hybridization state. In addition, experimental evid ences are presented of the formation of beta-C3N4 crystallites embedde d in a layer of a polymer like CNx amorphous phase. An evaluation of t he experimental parameters that lead to the highest N content in the f ilms is also included. (C) 1996 American Institute of Physics.