SIGN ALLOYS DEPOSITED BY ELECTRON-CYCLOTRON-RESONANCE PLASMA CHEMICAL-VAPOR-DEPOSITION

Authors
GOMEZ FJ PRIETO P ELIZALDE E PIQUERAS J
Citation
Fj. Gomez et al., SIGN ALLOYS DEPOSITED BY ELECTRON-CYCLOTRON-RESONANCE PLASMA CHEMICAL-VAPOR-DEPOSITION, Applied physics letters, 69(6), 1996, pp. 773-775
Citations number
27
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
69
Issue
6
Year of publication
1996
Pages
773 - 775
Database
ISI
SICI code
0003-6951(1996)69:6<773:SADBEP>2.0.ZU;2-Y
Abstract
Silicon-carbon-nitrogen alloys have been deposited by electron cyclotr on resonance plasma chemical vapor deposition. Nitrogen, methane, and argon diluted silane have been used as precursor gases. The properties of the deposited films were studied by spectroscopic ellipsometry, Fo urier transform infrared spectroscopy, X-ray photoelectron, and Auger electron spectroscopy. The structure and bond formation in the SiCN fi lms is discussed in terms of the present results. (C) 1996 American In stitute of Physics.