OPTICAL-DETECTION OF QUANTUM OSCILLATIONS IN INP INGAAS QUANTUM STRUCTURES/

A magnetooptical method based on optical detection of quantum oscillat ions via photoluminescence in a magnetic field is applied for characte rization of the electronic structure and recombination mechanisms in m odulation-doped semiconductor quantum structures. By studying modulati on-doped InP/InGaAs two-dimensional (2D) quantum structures as an exam ple case, the method is shown to be capable of obtaining information o n: (i) the electronic structure, filling of quantum subbands, as well as the effective mass of 2D carriers and band nonparabolicity; (ii) bo th equilibrium and nonequilibrium concentration of 2D carriers and the dependence of the carrier concentration and lifetime on injection lev el. (C) 1996 American Institute of Physics.