CONTROL OF GAAS LATERAL GROWTH-RATE BY CBR4 DURING METALORGANIC CHEMICAL-VAPOR-DEPOSITION ON PATTERNED SUBSTRATES

Lateral growth rate of GaAs is remarkably increased with supplying CBr 4, which has been utilized as a p-type dopant source for carbon doped GaAs epilayers during metalorganic chemical vapor deposition growth. T he lateral growth rate can be represented as a linear function of the CBr4 flow rate, while the GaAs vertical growth rate is relatively inse nsitive to the CBr, flow rate. The maximum ratio of the lateral to ver tical growth rate by CBr4 is about 29. With increasing the growth temp erature, the lateral growth rate increases, but it decreases at a more elevated growth temperature than 700 degrees C. These results are als o compared to the previous results obtained by CCl4. In all cases the lateral growth rate increments by CBr4 are larger than those by CCl4. (C) 1996 American Institute of Physics.