Si. Kim et al., CONTROL OF GAAS LATERAL GROWTH-RATE BY CBR4 DURING METALORGANIC CHEMICAL-VAPOR-DEPOSITION ON PATTERNED SUBSTRATES, Applied physics letters, 69(6), 1996, pp. 815-817
Lateral growth rate of GaAs is remarkably increased with supplying CBr
4, which has been utilized as a p-type dopant source for carbon doped
GaAs epilayers during metalorganic chemical vapor deposition growth. T
he lateral growth rate can be represented as a linear function of the
CBr4 flow rate, while the GaAs vertical growth rate is relatively inse
nsitive to the CBr, flow rate. The maximum ratio of the lateral to ver
tical growth rate by CBr4 is about 29. With increasing the growth temp
erature, the lateral growth rate increases, but it decreases at a more
elevated growth temperature than 700 degrees C. These results are als
o compared to the previous results obtained by CCl4. In all cases the
lateral growth rate increments by CBr4 are larger than those by CCl4.
(C) 1996 American Institute of Physics.