CORRELATION BETWEEN THE PHOTOLUMINESCENCE AND CHEMICAL BONDING IN POROUS SILICON

Authors
DIMOVAMALINOVSKA D JANVIER C SENDOVAVASSILEVA M KAMENOVA M MARINOVA T KRASTEV V
Citation
D. Dimovamalinovska et al., CORRELATION BETWEEN THE PHOTOLUMINESCENCE AND CHEMICAL BONDING IN POROUS SILICON, Solid state communications, 99(9), 1996, pp. 641-644
Citations number
15
Categorie Soggetti
Physics, Condensed Matter
Journal title
Solid state communications → ACNP
ISSN journal
00381098
Volume
99
Issue
9
Year of publication
1996
Pages
641 - 644
Database
ISI
SICI code
0038-1098(1996)99:9<641:CBTPAC>2.0.ZU;2-J
Abstract
The photoluminescence and X-ray photoelectron spectra of porous silico n prepared by electrochemical etching have been studied. A correlation between photoluminescence intensity and oxidized valence states of Si has been observed. The results show that porous silicon having suboxi de states of Si exhibits very intense photoluminescence which depends on the chemical bonding. Copyright (C) 1996 Elsevier Science Ltd