STUDY OF MOLECULAR-BEAM EPITAXIAL-GROWTH AND OPTICAL CHARACTERISTICS ON HGCDTE

Authors
GUO SP ZHANG JM LIU PL SHEN XC YUAN SX TOMM JW
Citation
Sp. Guo et al., STUDY OF MOLECULAR-BEAM EPITAXIAL-GROWTH AND OPTICAL CHARACTERISTICS ON HGCDTE, Acta physica Sinica, 5(5), 1996, pp. 370-376
Citations number
10
Categorie Soggetti
Physics
Journal title
Acta physica Sinica → ACNP
ISSN journal
10003290
Volume
5
Issue
5
Year of publication
1996
Pages
370 - 376
Database
ISI
SICI code
1000-3290(1996)5:5<370:SOMEAO>2.0.ZU;2-U
Abstract
HgCdTe epilayers were grown by molecular beam epitaxy on GaAs(211)B su bstrates, Process of the HgCdTe epitaxial growth can be monitored by r eflection high-energy electron diffraction. Results of the infrared tr ansmission spectrum, Raman scattering spectrum and infrared photolumin escence spectrum in magnetic field have been studied.