SINGLE-DOMAIN HEXAGONAL GAN FILMS ON GAAS(100) VICINAL SUBSTRATES GROWN BY HYDRIDE VAPOR-PHASE EPITAXY

Hexagonal GaN (h-GaN) films are grown on GaAs (100) vicinal substrates by hydride vapor phase epitaxy, The substrate misorientation dependen ce of the crystal structure is investigated by X-ray diffraction measu rements using a 4-circle diffractometer. It is found that misorientati on toward the [111]B direction is essential for the growth of single d omain h-GaN films and that the c-axis of the single domain h-GaN orien ts to the GaAs [111]B direction.