EFFECT OF OXYGEN ADDITIVE ON MICROWAVE PLASMA FOR DIAMOND FILM SYNTHESIS STUDIED BY THE PLASMA IMPEDANCE MEASUREMENT

Citation
H. Miyake et al., EFFECT OF OXYGEN ADDITIVE ON MICROWAVE PLASMA FOR DIAMOND FILM SYNTHESIS STUDIED BY THE PLASMA IMPEDANCE MEASUREMENT, JPN J A P 2, 35(7B), 1996, pp. 933-936
Citations number
13
Categorie Soggetti
Physics, Applied
Volume
35
Issue
7B
Year of publication
1996
Pages
933 - 936
Database
ISI
SICI code
Abstract
We have developed a new microwave-plasma-assisted chemical vapor depos ition (CVD) system for diamond film synthesis, which includes a real-t ime monitor of the plasma impedance in the microwave circuit. This imp edance measurement facilitated much the noncontact diagnosis of hydrog en-based CVD plasmas. It appeared that, with increasing the excitation energy, the impedance moved from capacitive to slightly reactive comp lexs. With high sensitivity and cleanliness, the impedance measurement s revealed that the addition of a small amount of oxygen to the hydrog en plasma increased the plasma density.