A CONTRIBUTION OF VIBRATIONALLY EXCITED CL-2 MOLECULES TO GAAS REACTIVE ION ETCHING IN CL-2 AR/

Authors
MOSHKALYOV SA MACHIDA M LEBEDEV SV CAMPOS DO
Citation
Sa. Moshkalyov et al., A CONTRIBUTION OF VIBRATIONALLY EXCITED CL-2 MOLECULES TO GAAS REACTIVE ION ETCHING IN CL-2 AR/, JPN J A P 2, 35(7B), 1996, pp. 940-943
Citations number
13
Categorie Soggetti
Physics, Applied
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS → ACNP
Volume
35
Issue
7B
Year of publication
1996
Pages
940 - 943
Database
ISI
SICI code
Abstract
The experimental results on GaAs RIE in Cl-2/Ar are considered within the framework of the ion-neutral synergy model. It has been shown, tha t the model gives a good agreement with the etch rate data obtained fo r low Cl-2 partial pressure, but fails at the increased chlorine perce ntage. A possible contribution of vibrationally excited Cl-2 molecules to GaAs etch rate has been considered.