WIDE-GAP A-SI1-XCX-H THIN-FILMS OBTAINED UNDER STARVING PLASMA DEPOSITION CONDITIONS

In this work the crucial role is established of the 'silane starving' plasma regime for the growth of a-Si1-xCx:H with chemical order simila r to that of crystalline SiC as well as for the growth of carbon rich alloys with high optical gap. The a-Si1-xCx:H films were characterized by optical absorption, infrared spectroscopy, Anger electron spectros copy, The samples were obtained by plasma enhanced chemical vapor depo sition (PECVD) from silane (SiH4) and methane (CH4) mixtures. In order to analyze the effect of silane starving plasma conditions on the mat erial properties, sets of samples were grown with identical methane co ncentrations but with different silane flows. The effect of varying me thane concentration on the properties of samples grown under starving plasma conditions is also studied.