POSITIVE AND NEGATIVE CHARGE CREATION IN THE SIO2 FILM OF A MOS-TRANSISTOR BY HIGH-ELECTRIC-FIELD STRESS

Authors
STRZALKOWSKI I KOWALSKI M
Citation
I. Strzalkowski et M. Kowalski, POSITIVE AND NEGATIVE CHARGE CREATION IN THE SIO2 FILM OF A MOS-TRANSISTOR BY HIGH-ELECTRIC-FIELD STRESS, Applied physics A: Materials science & processing, 63(2), 1996, pp. 179-182
Citations number
23
Categorie Soggetti
Physics, Applied
Journal title
Applied physics A: Materials science & processing → ACNP
ISSN journal
09478396
Volume
63
Issue
2
Year of publication
1996
Pages
179 - 182
Database
ISI
SICI code
0947-8396(1996)63:2<179:PANCCI>2.0.ZU;2-Y
Abstract
The aim of this work was to study the charge creation in the SiO2 laye r of a Si MOSFET induced by the electric field stress in the Fowler-No rdheim (FN) tunneling regime. At lower field, typical positive oxide c harge generation has been observed. With an increasing stressing field , which is accompanied by an increasing FN electron injection current, negative charge creation has been found. The possible sources of char ges and the mechanisms of their generation are presented.