FABRICATION OF SNXGE1-X THIN-FILMS WITH NONEQUILIBRIUM COMPOSITION

Citation
Jc. Bennett et Rf. Egerton, FABRICATION OF SNXGE1-X THIN-FILMS WITH NONEQUILIBRIUM COMPOSITION, Vacuum, 47(12), 1996, pp. 1419-1422
Citations number
9
Categorie Soggetti
Physics, Applied
Journal title
VacuumACNP
ISSN journal
0042207X
Volume
47
Issue
12
Year of publication
1996
Pages
1419 - 1422
Database
ISI
SICI code
0042-207X(1996)47:12<1419:FOSTWN>2.0.ZU;2-Y
Abstract
Amorphous films of Sn/Ge alloy were produced by coevaporation of tin a nd germanium onto substrates held at or below room temperature. A comp ositional gradient was introduced by means of a mask placed at an appr opriate distance from the substrate; transmission electron microscopy and energy-dispersive X-ray analysis were used to determine the local structure and chemical composition. The as-deposited films were amorph ous and single-phase up to 15 at% Sn, or up to 45 at% Sn for substrate s cooled to 100 K during deposition. When heated to 120 degrees C, the films crystallized to a diamond-cubic structure, with some precipitat ion of metallic tin. Copyright (C) 1996 Elsevier Science Ltd