STUDY OF HYDROGEN IN HYDROGENATED PD SEMICONDUCTOR DEVICE BY ERDA/

The content of hydrogen in Pd/n-Si, Pd/p-Si, and Pd/p-GaAs devices hav e been measured, both in the semiconducting substrates and the palladi um thin film deposited on p-type Si, n-type Si and p-type GaAs, by ERD A (Elastic Recoil Detection Analysis) using 55 Mev Si ions. The sample s were hydrogenated by keeping them in the atmosphere of molecular hyd rogen at a pressure of 1 atm at room temperature. It is found that the re is a fairly large amount of hydrogen in the semiconductor substrate s and the palladium overlayers. If seems that the hydrogen absorbed by the palladium overlayers diffuses to the semiconducting substrates th rough the Pd/Semiconductor interface. It is found that the p-type semi conducting substrates accommodate more hydrogen than n-type semiconduc ting substrates in such hydrogenated samples. Copyright (C) 1996 Elsev ier Science Ltd