CROSS-SECTIONAL SCANNING-TUNNELING-MICROSCOPY ON CLEAVED SI(111) - OBSERVATION OF NOVEL RECONSTRUCTION AND STRUCTURAL AND ELECTRICAL-PROPERTIES OF MOS INTERFACE

Cross-sectional scanning tunneling microscopy (XSTM) measurements reve aled two types of reconstructions on Si(lll) surfaces depending on the cleaving conditions. The first one is a 2 x 1 structure consistent wi th previous reports. The second one is a novel 8 x 1 structure, which shows a missing-row structure where one row is missing in every four r ows in the 2 x 1 structure. We propose a model. for the missing-row re construction seen on the Si(110) surface. XSTM observation of the meta l-oxide-semiconductor (MOS) interface structure clearly showed a fract ured metal layer and cleaved Si areas which demonstrated the possibili ty of observing the interface with atomic resolution, Scanning tunneli ng spectroscopy (STS) measurement of the Si part showed systematic shi fts of the spectra with the application of bias voltage between the me tal and the Si, which agreed well with the expected band bending in th e Si.