CU FILM GROWTH ON A SI(111) SURFACE STUDIED BY SCANNING-TUNNELING-MICROSCOPY

We observed a change in growth mode of Cu, while dynamically observing Cu film growth on a Si(lll)-7 x 7 surface during Cu deposition at roo m temperature by scanning tunneling microscopy (STM). Initially, Cu at oms were adsorbed mostly on the faulted halves of the 7 x 7 structure. Then, up to about 2 ML coverage, small Cu islands appeared. As the co verage increased from 2 to 3 ML, the growth mode changed into quasi-la yer-by-layer growth. With further deposition, 3-D islands having hexag onal terraces grew.